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Proceedings Paper

SSRM and SCM study for doping concentration of THz QCL devices
Author(s): Rudra S. Dhar; Dayan Ban
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Paper Abstract

Two-dimensional (2D) dopant profiling of the active region of THz quantum cascade laser (QCL) devices has been achieved with atomic force microscopy (AFM). Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) are shown as the two promising AFM techniques for 2D dopant profiling and mapping of dopant concentration for the sub-nanometer regime devices.

Paper Details

Date Published: 24 October 2012
PDF: 6 pages
Proc. SPIE 8412, Photonics North 2012, 84121Z (24 October 2012); doi: 10.1117/12.2000731
Show Author Affiliations
Rudra S. Dhar, Univ. of Waterloo (Canada)
Dayan Ban, Univ. of Waterloo (Canada)


Published in SPIE Proceedings Vol. 8412:
Photonics North 2012
Jean-Claude Kieffer, Editor(s)

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