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Proceedings Paper

Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: role of surface effects
Author(s): Congyong Zhu; Fan Zhang; Romualdo A. Ferreyra; Xing Li; Cemil Kayis; Vitaliy Avrutin; Ümit Özgür; Hadis Morkoç
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Paper Abstract

In an effort to investigate the particulars of their stability, In18.5%Al81.5%N/GaN HFETs were subjected to on-state electrical stress for intervals totaling up to 20 hours. The current gain cutoff frequency fT showed a constant increase after each incremental stress, which was consistent with the decreased gate lag and the decreased phase noise. Extraction of small-signal circuit parameters demonstrated that the increase of fT is due to a decrease in the gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) as well as the increased microwave transconductance (gm). All these behaviors are consistent with the diminishing of the gate extension (“virtual gate”) around the gate area.

Paper Details

Date Published: 4 March 2013
PDF: 7 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252H (4 March 2013); doi: 10.1117/12.2000558
Show Author Affiliations
Congyong Zhu, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Romualdo A. Ferreyra, Virginia Commonwealth Univ. (United States)
Xing Li, Virginia Commonwealth Univ. (United States)
Cemil Kayis, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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