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Proceedings Paper

Numerical analysis of direct current and transient characteristics on n+-i-n+ optically activated switches
Author(s): Ashok Parthasarathy; Juin J. Liou; Rodney A. Petr; A. Ortiz-Conde
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Paper Abstract

This paper presents simulation results for the dc and transient characteristics of the n(superscript +-i-n(superscript + photoconductive diode at room and cryogenic temperatures fabricated in silicon and in silicon carbide. The simulation is carried out using a two-dimensional device simulator called MEDICI which can solve numerically the Poisson equation, electron and hole current equations, electron and hole continuity equations, as well as heat transfer equation. Relevant physical mechanisms, such as lattice heating, Fermi-Dirac statistics, high-field and doping-dependent free-carrier mobility, and various generation and recombination mechanisms are accounted for in the simulation.

Paper Details

Date Published: 4 January 1995
PDF: 10 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198669
Show Author Affiliations
Ashok Parthasarathy, Univ. of Central Florida (United States)
Juin J. Liou, Univ. of Central Florida (United States)
Rodney A. Petr, W.J. Schafer Associates, Inc. (United States)
A. Ortiz-Conde, Univ. of Central Florida (United States)

Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)

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