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Proceedings Paper

Pre-firing electric field distribution in semi-insulating GaAs bulk avalanche switches
Author(s): Robert B. Darling; R. Aaron Falk; C. David Capps; Jeff C. Adams
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Paper Abstract

The prefiring electric field distribution within a bulk avalanche semiconductor switch has a strong bearing upon the propagation of current filaments that form during the conduction state, the voltage breakdown limits for the off-state, and thus the overall peak power scalability of the switch. In this paper, we apply a detailed numerical model for semi-insulating GaAs which includes the full electronic structure of the deep levels to calculate the internal field distribution under prefiring bias voltages. We demonstrate that the electric field is far from homogeneous, with a potential barrier being formed at the cathode end, and the maximum field occurring at the anode end. The more specific details of this electric field distribution are found to depend greatly upon the type of semi-insulating compensation mechanism present in the GaAs substrate. This electric field distribution agrees qualitatively with that determined by a novel optical imaging technique based upon the Franz-Keldysh effect.

Paper Details

Date Published: 4 January 1995
PDF: 12 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198668
Show Author Affiliations
Robert B. Darling, Univ. of Washington (United States)
R. Aaron Falk, Boeing Defense & Space Group (United States)
C. David Capps, Boeing Defense & Space Group (United States)
Jeff C. Adams, Boeing Defense & Space Group (United States)

Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)

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