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Proceedings Paper

Modeling of fast conductivity phenomena in semiconductors
Author(s): Maurice Weiner; Lawrence E. Kingsley; Terrence Burke; Kevin Fonda; Robert J. Youmans; Hardev Singh; Robert A. Pastore
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Paper Abstract

A simple transmission line model, which seeks to explain fast conductivity phenomena in semiconductors, such as photoconductivity or avalanching (induced by either light or displacement current waves), is proposed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains an imaginary transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The same transmission line may be used to convey light energy produced in the semiconductor. The transmission line also serves as the energy storage element. Time varying nodal resistors, located at the transmission line junctions, control the conductivity. The nodal resistors embody the physics of the semiconductor, whereas the transmission line matrix accounts for energy spread. Slower semiconductor mechanisms, such as carrier drift, may be easily incorporated into the formalism, if necessary. The model points out the importance of triggering either an avalanche or displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching.

Paper Details

Date Published: 4 January 1995
PDF: 12 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198666
Show Author Affiliations
Maurice Weiner, U.S. Army Research Lab. (United States)
Lawrence E. Kingsley, U.S. Army Research Lab. (United States)
Terrence Burke, U.S. Army Research Lab. (United States)
Kevin Fonda, U.S. Army Research Lab. (United States)
Robert J. Youmans, U.S. Army Research Lab. (United States)
Hardev Singh, U.S. Army Research Lab. (United States)
Robert A. Pastore, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)

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