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Proceedings Paper

Optical switching of bipolar-mode field effect transistors
Author(s): Giovanni Breglio; Antonello Cutolo; Paolo Spirito; Luigi Zeni
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Paper Abstract

We show the feasibility of an optically controlled silicon Bipolar Mode Field Effect Transistor (BMFET) to switch high electrical powers up to 1 kW by exploiting a 25 mW laser diode. We have compared the performance of the BMFET with that of a commercial high power bipolar junction transistor (BJT). Under the same illumination conditions, the switching power of the BMFET has been always higher than that of the BJT by a factor greater than one order of magnitude.

Paper Details

Date Published: 4 January 1995
PDF: 7 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198651
Show Author Affiliations
Giovanni Breglio, Univ. di Napoli (Italy)
Antonello Cutolo, Univ. di Napoli (Italy)
Paolo Spirito, Univ. di Napoli (Italy)
Luigi Zeni, Univ. di Napoli (Italy)


Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)

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