Proceedings Paper
Direct electro-optic measurement of the internal fields of GaAs photoconductive switches| Format | Member Price | Non-Member Price |
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Paper Abstract
The electric fields of bulk (100) and surface (111) GaAs high-voltage photoconductive switches were imaged utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects and time dependent field nonuniformities is shown.
Paper Details
Date Published: 4 January 1995
PDF: 12 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198645
Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)
PDF: 12 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198645
Show Author Affiliations
R. Aaron Falk, Boeing Defense & Space Group (United States)
Jeff C. Adams, Boeing Defense & Space Group (United States)
C. David Capps, Boeing Defense & Space Group (United States)
Jeff C. Adams, Boeing Defense & Space Group (United States)
C. David Capps, Boeing Defense & Space Group (United States)
Stuart G. Ferrier, Boeing Defense & Space Group (United States)
Jeffrey A. Krinsky, Boeing Defense & Space Group (United States)
Jeffrey A. Krinsky, Boeing Defense & Space Group (United States)
Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)
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