Share Email Print
cover

Proceedings Paper

Xerographic dark discharge of a-Si:H(p)/a-Si:H(i)/a-Si1-x Cx:H photoreceptors
Author(s): M. Baxendale; S. Biswas; C. Juhasz
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

There has been much interest recently in hydrogenated amorphous silicon-based photoreceptors. The conventional configuration has become a diode-like semiconductor structure with an insulator overcoat layer operated in reverse bias. We have investigated the electric field and temperature dependence of the xerographic dark discharge of a corona or capacitively charged a-Si :H photoreceptor of configuration Al/a-Si:H(p)/a-Si:H(i)/a-5i1 _xCx:H . The band gap mismatch at the semicondutor/insulator interface appears as an energy barrier in the conduction band only. The role of this energy barrier in the dark discharge mechanism has been investigated by us. With a high initial field charging regime thermal generation within the intrinsic region was identified as the rate-limiting process. The zero-field energy barrier for thermal emission is measured to be 0.94 eV. These observations are in agreement with other workers, but previously reported anomalous temperature-dependent high-field behaviour was not observed. An apparent bulk controlled negative differential resistance (NDR) was found by us to control the discharge in the low-initial field regime. A NDR has been observed previously in the d.c characteristic of these devices where an increasing bias was applied step-wise. The observation of a similar NDR in the xerographic discharge mode is somewhat surprising.

Paper Details

Date Published: 1 July 1990
PDF: 9 pages
Proc. SPIE 1253, Hard Copy and Printing Materials, Media, and Processes, (1 July 1990); doi: 10.1117/12.19816
Show Author Affiliations
M. Baxendale, Thames Polytechnic (United Kingdom)
S. Biswas, Brunel Univ. (United Kingdom)
C. Juhasz, Imperial College of Science, Technology and Medicine (United Kingdom)


Published in SPIE Proceedings Vol. 1253:
Hard Copy and Printing Materials, Media, and Processes
Joseph Gaynor, Editor(s)

© SPIE. Terms of Use
Back to Top