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Proceedings Paper

Doping of ZnSe using gas source molecular beam epitaxy
Author(s): Easen Ho; P. A. Fisher; J. L. House; Gale S. Petrich; Leslie A. Kolodziejski
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Paper Abstract

Gas source molecular beam epitaxy (GSMBE) of ZnSe has been performed with emphasis in understanding the incorporation of substitutional donor and acceptor impurity species. Elemental Zn and hydrogen selenide provide the constituent species, whereas ZnCl2 and nitrogen gas, combined with the use of a radio frequency plasma cell, provide the dopant species for n- and p-type ZnSe, respectively. The hydrogenation behavior of ZnSe:Cl and ZnSe:N are compared, and we have found that the presence of hydrogen does not significantly affect the electrical behavior of n-type layers. However, the presence of hydrogen very effectively passivates acceptor species of nitrogen to prohibit p-type conductivity. Conventional and rapid thermal annealing have been investigated to modify the degree of hydrogen passivation.

Paper Details

Date Published: 21 December 1994
PDF: 9 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197266
Show Author Affiliations
Easen Ho, Massachusetts Institute of Technology (United States)
P. A. Fisher, Massachusetts Institute of Technology (United States)
J. L. House, Massachusetts Institute of Technology (United States)
Gale S. Petrich, Massachusetts Institute of Technology (United States)
Leslie A. Kolodziejski, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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