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Proceedings Paper

Molecular beam epitaxy (MBE) growth of ZnMgSeTe light-emitting diodes
Author(s): Wolfgang Faschinger; S. Ferreira; R. Krump; G. Brunthaler; Helmut Sitter
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Paper Abstract

One of the main problems for the fabrication of optoelectronic devices in the blue spectral range is the limited p-dopability and the resulting high contact resistivity of p-ZnSe. We show that the admixture of even small Te fractions to ZnSe has a strong beneficial effect on doping levels and contacts of MBE grown material doped with DC nitrogen plasma. Since the energy gap decreases through the admixture of Te, we additionally introduced Mg in order to remain in the blue range of the spectrum. P-doping levels above 1018 cm-3 and Ohmic contacts to ZnMgSeTe could be obtained for Te contents of more than 20%, the highest levels being 1020 cm-3 for Zn(1-x)MgxSe(1-y)Tey with x < 0.2 and y > 0.4. On the other hand, the admixture of Te to ZnSe strongly reduced the obtained n-doping levels. As a viable alternative we used n-type layers of Chlorine doped ZnMgSe. This allowed the growth of pn-junctions of n-ZnMgSe and p- ZnMgSeTe. The Mg content in the n- and p-layer was adjusted in a way that both layers had the same lattice constant and the same doping level of 1018 cm-3. The diodes emit light in the blue-green spectral range at 77 K. Although the optical properties have to be improved for device applications, ZnMgSeTe could be an interesting alternative for blue light emitters since high doping levels, ohmic p- contacts and low operation voltages are obtainable in a relatively easy way.

Paper Details

Date Published: 21 December 1994
PDF: 11 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197265
Show Author Affiliations
Wolfgang Faschinger, Univ. Linz (Austria)
S. Ferreira, Univ. Linz (Austria)
R. Krump, Univ. Linz (Austria)
G. Brunthaler, Univ. Linz (Austria)
Helmut Sitter, Univ. Linz (Austria)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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