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Proceedings Paper

Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes
Author(s): Mike D. Ringle; Donald C. Grillo; Yongping Fan; Guo-Chun Hua; Jung Han; Robert L. Gunshor
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Paper Abstract

The growth of ZnMgSSe is a key component of long-lived II-VI laser diodes, however there are structural and electrical problems associated the compound that must be resolved. Precise lattice matching requires accurate growth temperature control due to the dependance of the sulfur sticking coefficient on the growth temperature. Electrically, p-type doping of ZnMgSSe is complicated by an apparent increase in the activation energy caused by a mechanism very much like that of the DX center in n-type III-V alloys. These factors must be addressed for II-VI light emitting devices in deep blue part of the spectrum.

Paper Details

Date Published: 21 December 1994
PDF: 8 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197264
Show Author Affiliations
Mike D. Ringle, Purdue Univ. (United States)
Donald C. Grillo, Purdue Univ. (United States)
Yongping Fan, Purdue Univ. (United States)
Guo-Chun Hua, Purdue Univ. (United States)
Jung Han, Purdue Univ. (United States)
Robert L. Gunshor, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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