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Proceedings Paper

Microstructure study of failure mechanism of II-VI blue-green laser diodes
Author(s): Guo-Chun Hua; Donald C. Grillo; Jung Han; Mike D. Ringle; Yongping Fan; Robert L. Gunshor; Minna Hovinen; Arto V. Nurmikko; Nobuo Otsuka
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Paper Abstract

The rapid degradation mechanism of current II-VI blue-green laser diodes based on the pseudomorphic ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures (SCHs) grown by MBE has been studied by using electroluminescence (EL) and transmission electron microscopy (TEM). Nonluminescent dark defects observed in the laser diodes have been identified to be dislocation networks consisting of branches of dislocation dipoles developed at the quantum well region. Stacking fault-dislocation complexes introduced into the laser structure during the MBE growth have been found to be the origin for the nucleation of the dislocation networks. The experimental results indicate that the point defect density at the quantum well region can be reduced by optimizing the growth conditions of the region.

Paper Details

Date Published: 21 December 1994
PDF: 11 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197263
Show Author Affiliations
Guo-Chun Hua, Purdue Univ. (United States)
Donald C. Grillo, Purdue Univ. (United States)
Jung Han, Purdue Univ. (United States)
Mike D. Ringle, Purdue Univ. (United States)
Yongping Fan, Purdue Univ. (United States)
Robert L. Gunshor, Purdue Univ. (United States)
Minna Hovinen, Brown Univ. (United States)
Arto V. Nurmikko, Brown Univ. (United States)
Nobuo Otsuka, Japan Advanced Institute of Science and Technology/Hokuriku (United States)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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