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Proceedings Paper

Optical degradation of II-VI devices and heterostructures
Author(s): Greg Meis Haugen; Supratik Guha; Jim M. DePuydt; Michael A. Haase; Kwok Keung Law; Thomas J. Miller; Bor-Jen Wu
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Paper Abstract

We report the use of photoluminescence imaging as a quick and effective method for determining defect densities and giving insight into degradation mechanisms in II-VI CdxZn1-xSe quantum well devices and heterostructures grown on GaAs. From our use of photoluminescence imaging we have observed that the device lifetimes are dependent on the stacking fault density. The stacking faults serve as nonradiative recombination centers that generate the dark line defects. In our studies, degradation rates were found to be independent of chlorine doping, barrier material, and the removal of the GaAs substrate.

Paper Details

Date Published: 21 December 1994
PDF: 5 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197262
Show Author Affiliations
Greg Meis Haugen, 3M SRL Photonics (United States)
Supratik Guha, 3M SRL Photonics (United States)
Jim M. DePuydt, 3M SRL Photonics (United States)
Michael A. Haase, 3M SRL Photonics (United States)
Kwok Keung Law, 3M SRL Photonics (United States)
Thomas J. Miller, 3M SRL Photonics (United States)
Bor-Jen Wu, 3M SRL Photonics (United States)

Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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