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Proceedings Paper

Initial stages of ZnSe growth on the GaAs(001) surface studied by scanning tunneling microscopy
Author(s): Michael D. Pashley; Du Li
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Paper Abstract

In this paper we describe Scanning Tunnelling Microscopy (STM) studies of the initial stages of the growth of ZnSe on GasAs(001). The starting GaAs(001)-(2 X 4) surface on GaAs epilayers and on oxide desorbed surfaces has been imaged. The GaAs epilayer surface is found to be much smoother than the GaAs oxide desorbed surface. ZnSe growth on a Se- terminated GaAs-(2 X 1) surface has been found to result in 3D nucleation and island growth and results in a high density of stacking faults in the ZnSe film. ZnSe growth started directly on the GaAs-(2 X 4) surface is more 2D, although rather disordered, and results in a lower stacking fault density in the ZnSe film.

Paper Details

Date Published: 21 December 1994
PDF: 5 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197254
Show Author Affiliations
Michael D. Pashley, Philips Labs. (United States)
Du Li, Philips Labs. (United States)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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