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Proceedings Paper

Electronic states and radiative recombination processes in ZnS-ZnSe short period superlattices
Author(s): B. Gil; Massimo Di Blasio; T. Cloitre; P. Bigenwald; L. Aigouy; Olivier Briot; N. Briot; R. L. Aulombard
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Paper Abstract

This paper addresses the growth of short period ZnS-ZnSe superlattices by low pressure Metal-Organic Vapor Phase Epitaxy. We have correlated the photoluminescence line shape to the interface roughness within the context of a phenomenological interface disorder. Using additional reflectivity experiments we could develop envelope function calculation and find the band offset. Finally we have calculated the exciton binding energy in ZnSe-ZnS quantum wells in the context a the variational approach using models of varying sophistication.

Paper Details

Date Published: 21 December 1994
PDF: 11 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197252
Show Author Affiliations
B. Gil, Univ. de Montpellier II (France)
Massimo Di Blasio, Univ. de Montpellier II (France)
T. Cloitre, Univ. de Montpellier II (France)
P. Bigenwald, Univ. de Montpellier II (France)
L. Aigouy, Univ. de Montpellier II (France)
Olivier Briot, Univ. de Montpellier II (France)
N. Briot, Univ. de Montpellier II (France)
R. L. Aulombard, Univ. de Montpellier II (France)


Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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