Share Email Print
cover

Proceedings Paper

Formation of ohmic contacts to Si and InP by laser-stimulated diffusion methods
Author(s): G. N. Mikhailova; A. V. Chankin; E. N. Lubnin; A. L. Mikhailichenko; A. S. Seferov; A. Yu. Bonchik; S. G. Kiyak; A. V. Pokhmuskaya; Vinoy K. Jain
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Pulsed Nd+3 laser and 100 W cw CO2 laser have been used to form ohmic contacts to p-Si. The contact region consists of a layered structure of Ag(5 micrometers )/Pd(300 angstroms)/Ti(1200 angstroms)/p-Si. 1 kW cw CO2 laser was applied to obtain ohmic contacts on Au/Au-Ge:Ni/n-InP structure. Secondary Ions Mass-Spectroscopy, Electron Auger Spectroscopy and I-V dependence measurements were carried out, and these results are presented. High-quality ohmic contacts with the resistivity of 5 X 10-5 (Omega) (DOT) cm2 can be achieved using cw CO2 laser.

Paper Details

Date Published: 12 December 1994
PDF: 6 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195887
Show Author Affiliations
G. N. Mikhailova, General Physics Institute (Russia)
A. V. Chankin, General Physics Institute (Russia)
E. N. Lubnin, General Physics Institute (Russia)
A. L. Mikhailichenko, General Physics Institute (Russia)
A. S. Seferov, General Physics Institute (Russia)
A. Yu. Bonchik, Institute of Applied Problems of Mechanics and Mathematics (Russia)
S. G. Kiyak, Institute of Applied Problems of Mechanics and Mathematics (Russia)
A. V. Pokhmuskaya, Institute of Applied Problems of Mechanics and Mathematics (Russia)
Vinoy K. Jain, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies

© SPIE. Terms of Use
Back to Top