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Proceedings Paper

Application of IR laser light scattering for nondestructive control of near-surface regions in semiconductor substrates
Author(s): Victor P. Kalinushkin; D. I. Murin; Vladimir A. Yuryev; Oleg V. Astafiev; A I. Buvaltsev
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Paper Abstract

The method for investigation and control of large-scale recombination-active defects in near- surface regions of semiconductor wafers is proposed. The potentialities of the technique proposed are illustrated by the example of germanium single crystals.

Paper Details

Date Published: 12 December 1994
PDF: 8 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195885
Show Author Affiliations
Victor P. Kalinushkin, General Physics Institute (Russia)
D. I. Murin, General Physics Institute (Russia)
Vladimir A. Yuryev, General Physics Institute (Russia)
Oleg V. Astafiev, General Physics Institute (Russia)
A I. Buvaltsev, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies
Vladimir I. Pustovoy; Miroslav Jelinek, Editor(s)

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