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Proceedings Paper

Nondestructive method for visualization of free carrier accumulations in standard semiconductors wafers
Author(s): Oleg V. Astafiev; Victor P. Kalinushkin; Vladimir A. Yuryev
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Paper Abstract

A new non-destructive method for visualization of free carrier accumulations in standard semiconductors wafers (VCA or scanning low-angle light scattering) is being proposed first. The method has been applied to visualize large-scale electrically active defect accumulations in a number of semiconductor crystals. It allows mapping and investigating technological semiconductor wafers, being sensitive to low concentration of free carriers in the accumulations.

Paper Details

Date Published: 12 December 1994
PDF: 8 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195884
Show Author Affiliations
Oleg V. Astafiev, General Physics Institute (Russia)
Victor P. Kalinushkin, General Physics Institute (Russia)
Vladimir A. Yuryev, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies
Vladimir I. Pustovoy; Miroslav Jelinek, Editor(s)

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