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Proceedings Paper

Novel technique for porous Si film preparation
Author(s): V. I. Beklemyshev; V. M. Gontar; Vlad V. Levenets; I. I. Makhonin
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Paper Abstract

Nucleous layer of amorphous silicon has been used for chemically etched porous Si preparation in solution HF:H2O (HF:HNO3:H2O). This effect has been utilized to produce selective-area photoemission in porous Si with submicrometer resolution for the first time. This technique can be easily incorporated into conventional semiconductor fabrication technology.

Paper Details

Date Published: 12 December 1994
PDF: 8 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195881
Show Author Affiliations
V. I. Beklemyshev, Zelenograd Institute of Physical Problems (Russia)
V. M. Gontar, Zelenograd Institute of Physical Problems (Russia)
Vlad V. Levenets, High Purity Materials Institute (Russia)
I. I. Makhonin, Zelenograd Institute of Physical Problems (Russia)


Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies
Vladimir I. Pustovoy; Miroslav Jelinek, Editor(s)

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