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Proceedings Paper

Preparation and optical properties of porous silicon
Author(s): V. A. Karavanskii; Anton P. Maslov
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Paper Abstract

We have conducted an extensive experimental investigations of optical properties of porous silicon with special emphasis to their dependence upon the microstructure of the material. We present the results of direct STM observation of `quantum wires' in porous silicon and time- resolved optical spectrum of nonlinear transmittance, featuring sharp peaks which can be attributed to the saturation of the optical transition between spatially quantized levels of carriers in `quantum wires'. It was found that porous silicon is strongly nonlinear optical material with Im(chi) (3) approximately equals 10-8 esu.

Paper Details

Date Published: 12 December 1994
PDF: 13 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195880
Show Author Affiliations
V. A. Karavanskii, General Physics Institute (Russia)
Anton P. Maslov, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies
Vladimir I. Pustovoy; Miroslav Jelinek, Editor(s)

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