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Proceedings Paper

Laser annealing of thin semiconductor films
Author(s): Johannes Boneberg; J. Nedelcu; Ernst Bucher; Paul Leiderer
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Paper Abstract

Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallization of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser.

Paper Details

Date Published: 12 December 1994
PDF: 14 pages
Proc. SPIE 2332, Second International Symposium on Advanced Laser Technologies, (12 December 1994); doi: 10.1117/12.195876
Show Author Affiliations
Johannes Boneberg, Univ. Konstanz (Germany)
J. Nedelcu, Univ. Konstanz (Germany)
Ernst Bucher, Univ. Konstanz (Germany)
Paul Leiderer, Univ. Konstanz (Germany)


Published in SPIE Proceedings Vol. 2332:
Second International Symposium on Advanced Laser Technologies
Vladimir I. Pustovoy; Miroslav Jelinek, Editor(s)

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