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Proceedings Paper

Design optimization of optical proximity correction mask for device manufacturing
Author(s): Emiko Sugiura; Hisashi Watanabe; Tadashi Imoriya; Yoshihiro Todokoro
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Paper Abstract

The optimized design and fabrication of optical proximity correction (OPC) masks with serifs have been described for the application of mask ROM programming layer, which has 1 micrometers square patterns with 0.6 micrometers separation on a g-line stepper with 0.45 numerical aperture (NA). We have optimized the trade-off among the optical correction effects, practical mask fabrication problems, and inspection problems. Firstly, to obtain the sufficient correction effect on the topographic substrate, we have executed not only the simulation and experiments on the flat substrate, but also the experiments on the topographic substrate. Secondly, from the practical mask fabrication considerations we fixed the rules that the size of serifs must be larger than 1.0 micrometers square and the minimum separation width of mask patterns must be larger than 1.5 micrometers on 5X reticle. Thirdly, to maximize the detection capability of mask defects and to minimize the detection of false defects, we have fitted the fabricated mask patterns to the designed data by optimizing the electron dose.

Paper Details

Date Published: 7 December 1994
PDF: 12 pages
Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195820
Show Author Affiliations
Emiko Sugiura, Matsushita Electronics Corp. (Japan)
Hisashi Watanabe, Matsushita Electronics Corp. (Japan)
Tadashi Imoriya, Matsushita Electronics Corp. (Japan)
Yoshihiro Todokoro, Matsushita Electronics Corp. (Japan)


Published in SPIE Proceedings Vol. 2322:
14th Annual BACUS Symposium on Photomask Technology and Management
William L. Brodsky; Gilbert V. Shelden, Editor(s)

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