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Proceedings Paper

Optimizing proximity correction for wafer fabrication processes
Author(s): John P. Stirniman; Michael L. Rieger
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Paper Abstract

A key requirement for any proximity correction method is the ability to accurately predict proximity effects for any given circuit configuration. In this paper we present a methodology for characterizing proximity effects from measurements taken on a processed wafer. The characterization will determine what types of effects are present, which effects can be corrected, and it will quantify behavior parameters for a generalized proximity error model.

Paper Details

Date Published: 7 December 1994
PDF: 8 pages
Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195819
Show Author Affiliations
John P. Stirniman, Precim Co. (United States)
Michael L. Rieger, Precim Co. (United States)


Published in SPIE Proceedings Vol. 2322:
14th Annual BACUS Symposium on Photomask Technology and Management
William L. Brodsky; Gilbert V. Shelden, Editor(s)

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