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Proceedings Paper

Evaluation of image-placement distortion contributors of the EL-3+ electron-beam lithography system in x-ray mask fabrication
Author(s): Denise M. Puisto; Mark Lawliss
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Paper Abstract

An in-depth study of image-placement distortion contributors has been completed using the IBM EL-3+ electron-beam lithography system for fabricating x-ray masks. The EL- 3+ is an IBM-designed system which has been described in previous papers. System features include: 50-kV accelerating voltage, variable-shaped spot, variable-axis immersion lens (VAIL) for normal incidence of the beam to the target plane, and 20 A/cm2 current density. Image-placement performance of the system is measured with respect to an absolute grid as defined by a National Institute for Standards Technology magnification standard. Although repeatable image-placement errors can be corrected by the use of novel techniques, the correction methods can be very time-consuming and labor-intensive. The purpose of this study was to determine error sources so that they could be minimized, eliminating the need for complex correction methods. The results showed that the primary errors were pattern- dependent and caused by the electron-beam system (e.g., beam drift) and substrate/resist charging; they also indicated that resist stress could be a significant factor in x-ray mask- making because the substrate is a very thin membrane. The experimental procedure and results are presented in detail.

Paper Details

Date Published: 7 December 1994
PDF: 9 pages
Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195806
Show Author Affiliations
Denise M. Puisto, Loral Federal Systems Co. and IBM Microelectronics (United States)
Mark Lawliss, Loral Federal Systems Co. and IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 2322:
14th Annual BACUS Symposium on Photomask Technology and Management
William L. Brodsky; Gilbert V. Shelden, Editor(s)

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