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Proceedings Paper

New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs
Author(s): James R. Janesick; Tom S. Elliott; Arsham Dingiziam; Richard A. Bredthauer; Charles E. Chandler; James A. Westphal; James E. Gunn
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Paper Abstract

This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.

Paper Details

Date Published: 1 July 1990
PDF: 15 pages
Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19452
Show Author Affiliations
James R. Janesick, Jet Propulsion Lab. (United States)
Tom S. Elliott, Jet Propulsion Lab. (United Kingdom)
Arsham Dingiziam, Jet Propulsion Lab. (United States)
Richard A. Bredthauer, Ford Aerospace Corp. (United States)
Charles E. Chandler, Ford Aerospace Corp. (United States)
James A. Westphal, California Institute of Technology (United States)
James E. Gunn, Princeton Univ. (United States)

Published in SPIE Proceedings Vol. 1242:
Charge-Coupled Devices and Solid State Optical Sensors
Morley M. Blouke, Editor(s)

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