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Proceedings Paper

Effects of transistor geometry on CCD output sensitivity
Author(s): H. E. Kim; Morley M. Blouke; Denis L. Heidtmann
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Paper Abstract

This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate.

Paper Details

Date Published: 1 July 1990
PDF: 10 pages
Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19440
Show Author Affiliations
H. E. Kim, Tektronix, Inc. (United States)
Morley M. Blouke, Tektronix, Inc. (United States)
Denis L. Heidtmann, Tektronix, Inc. (United States)

Published in SPIE Proceedings Vol. 1242:
Charge-Coupled Devices and Solid State Optical Sensors
Morley M. Blouke, Editor(s)

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