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Proceedings Paper

Characterization of soft x-ray damage in charge-coupled devices
Author(s): Nigel M. Allinson; D. W.E. Allsopp; B. G. Magorrian; J. Alan Quayle
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Paper Abstract

The paper presents the use of deep level transient spectroscopy to characterize trapping centers in CCD imagers. A discussion is presented regarding the effects of UV illumination and elevated temperature annealing in a hydrogen-rich environment. Two trapping centers are described, and the annealing experiments suggest techniques for extending CCD lifetimes.

Paper Details

Date Published: 1 July 1990
PDF: 11 pages
Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19439
Show Author Affiliations
Nigel M. Allinson, Univ. of York (United Kingdom)
D. W.E. Allsopp, Univ. of York (United Kingdom)
B. G. Magorrian, Univ. of York (United Kingdom)
J. Alan Quayle, Univ. of York (United Kingdom)

Published in SPIE Proceedings Vol. 1242:
Charge-Coupled Devices and Solid State Optical Sensors
Morley M. Blouke, Editor(s)

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