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Proceedings Paper

InP Gunn diodes and millimeter-wave applications
Author(s): J. D. Crowley
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Paper Abstract

InP Gunn diodes provide low-cost, efficient, reliable solutions to power generation and amplification problems throughout the millimeter-wave range. InP has replaced GaAs as the material of choice for most millimeter wave Gunn diodes. It offers a significant efficiency advantage and has extended the frequency range of practical Gunn oscillators beyond 140 GHz. Device performance in applications ranging from 35 to 140 GHz will be described, including local oscillators, VCOs, power amplifiers, and power combiners. CW output powers exceed 500 mW at 35 GHz, 150 mW at 94 GHz and 50 mW at 140 GHz, while conversion efficiencies exceed 15%, 6%, and 2.5%, respectively.

Paper Details

Date Published: 14 December 1994
PDF: 23 pages
Proc. SPIE 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review, 1027606 (14 December 1994); doi: 10.1117/12.194300
Show Author Affiliations
J. D. Crowley, Litton Solid State (United States)


Published in SPIE Proceedings Vol. 10276:
Millimeter and Microwave Engineering for Communications and Radar: A Critical Review
James C. Wiltse, Editor(s)

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