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Proceedings Paper

New type of thin film color image sensor
Author(s): Qi Zhu; Helmut Stiebig; Peter Rieve; Juergen Giehl; Michael Sommer; Markus Boehm
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Paper Abstract

A new thin film color sensor array has been developed. In this device a single pixel consists of a combination of an amorphous silicon nipin detector and a crystalline operational amplifier. The carrier transport mechanisms of the diode under dark conditions as well as steady state opto electronic behavior of the nipin structure have been studied in theory and experiment in order to optimize the design of the image sensor. As a result, nipin structures with excellent dynamic range and linearity have been fabricated. Our study has also demonstrated that a three color detector can be obtained either by optimization of the design of the detector or by appropriate signal processing. The limitations arising from the design rules of the crystalline electronics for a single channel MOSFET process and their impact on readout performance and signal distortion are discussed. A novel two stage operational amplifier with optimized design and layout has been fabricated. Because of the superior performance of the amplifier and the diode this sensor is especially suitable for high sensitive color image processing applications.

Paper Details

Date Published: 9 November 1994
PDF: 10 pages
Proc. SPIE 2247, Sensors and Control for Automation, (9 November 1994); doi: 10.1117/12.193941
Show Author Affiliations
Qi Zhu, Univ. Siegen (Germany)
Helmut Stiebig, Univ. Siegen (Germany)
Peter Rieve, Univ. Siegen (Germany)
Juergen Giehl, Univ. Siegen (Germany)
Michael Sommer, Univ. Siegen (Germany)
Markus Boehm, Univ. Siegen (Germany)


Published in SPIE Proceedings Vol. 2247:
Sensors and Control for Automation
Markus Becker; R. W. Daniel; Otmar Loffeld, Editor(s)

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