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Proceedings Paper

Control of silicon oxynitrides refractive index by reactive-assisted ion beam sputter deposition
Author(s): Michel Ida; Patrick Chaton; B. Rafin
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Paper Abstract

This paper presents the properties of silicon oxynitrides obtained by reactive ion beam sputter deposition: Dual Ion Beam System. Control of refractive index was achieved by adjusting the process parameters as ion beam current, ion beam energy and reactive gas partial pressure of oxygen and nitrogen. The main difficulty was to achieve stoichiometric nitride, it has been shown that energetic ionized nitrogen was needed to obtain silicon nitride. The major parameter, to obtain variable compositions between silica and silicon nitride, was the oxygen partial pressure with a fixed nitrogen partial pressure. Optical constants in the visible range, refractive index and extinction coefficient, have been measured by spectrophotometry and spectroscopic ellipsometry. Stoichiometry, contamination and packing density have been measured by Rutherford Backscattering and Nuclear Reaction Analysis. The correlation between the film composition and optical constants is shown. Various test results indicate that silicon oxynitrides obtained by reactive assisted ion beam sputtering are high quality optical materials. These films are homogeneous isotropic, with a high packing density. The extinction coefficient is in the order of 10-4 after 300 degree(s)C annealing. All values of refractive index between 1.49 and 2.1 can be chosen.

Paper Details

Date Published: 4 November 1994
PDF: 10 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192113
Show Author Affiliations
Michel Ida, CEA/LETI/CMO (France)
Patrick Chaton, CEA/LETI/CMO (France)
B. Rafin, CEA/LETI/CMO (France)

Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)

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