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Proceedings Paper

Development of transparent conductive ZnO by Rf magnetron sputtering
Author(s): Francesca Demichelis; C. F. Pirri; E. Tresso
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Paper Abstract

In the present work it is reported a study on ZnO:Al deposited by RF magnetron sputtering of Zn and Al cathodes, or ZnO and Al cathodes in Ar+O2 and Ar atmosphere respectively. In order to obtain high band-gap films transparent in the 300 - 1000 nm wavelength region and highly electrical conductive films, an optimization of the deposition parameters has been performed by the Robust Design Method. ZnO:Al films, with an average transmittance above 85% for about 5000 angstroms thickness and a resistivity of 2 10-3 (Omega) cm have been grown.

Paper Details

Date Published: 4 November 1994
PDF: 11 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192077
Show Author Affiliations
Francesca Demichelis, Politecnico di Torino (Italy)
C. F. Pirri, Politecnico di Torino (Italy)
E. Tresso, Politecnico di Torino (Italy)


Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings

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