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Proceedings Paper

Residual stresses in silicon dioxide thin films prepared by reactive electron beam evaporation
Author(s): Herve Leplan; Bernard Geenen; Jean-Yves Robic; Y. Pauleau
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Paper Abstract

In this study, residual stresses and optical properties of SiO2 films prepared by reactive electron gun evaporation have been investigated as a function of process parameters. The purpose of this work was to find process conditions resulting in SiO2 stress free films or in a stress level balancing the high index material stress in a multilayer structure. We have found that stress in SiO2 films becomes more compressive with conditions resulting in denser coatings (such as high substrate temperatures or low gas pressures). Using an in situ measurement technique, stress stabilities of these films were also studied under vacuum or heated environments. These experiences have confirmed the porous structure of evaporated coatings and have underlined the great importance of water in their final state of stress.

Paper Details

Date Published: 4 November 1994
PDF: 12 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192068
Show Author Affiliations
Herve Leplan, Matra Defense (France)
Bernard Geenen, Matra Defense (France)
Jean-Yves Robic, CEA/LETI/CMO (France)
Y. Pauleau, ENSEEG (France)


Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)

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