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Proceedings Paper

Optical techniques and reflection: high-energy electron diffraction for investigation of semiconductor surface and interface roughness
Author(s): Marian A. Herman
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Paper Abstract

The problems of how optical techniques, i.e., luminescence and optical reflectivity measurements, and how the reflection high energy electron diffraction method may be used for studying the surface and interface roughness of semiconductor structures grown by molecular beam epitaxy (MBE) are reviewed. Luminescence spectroscopy is presented as a post- growth measurement technique used for analysis of the structural disorder occurring during the growth process at the interfaces of quantum well heterostructures. Optical reflectivity techniques are descussed from the point of view of monitoring in situ the growth rate, the roughness and the chemical inhomogeneity of the solid surfaces which grow epitaxially in the MBE crystallization system. The reflection high energy electron diffraction (RHEED) technique is presented and shortly discussed as the in situ controlling technique, most frequently used in MBE processes. The paper is concluded with an outlook indicating the current trends in applying optical techniques for studying and controling surfaces and interfaces of MBE grown semiconductor structures.

Paper Details

Date Published: 31 October 1994
PDF: 16 pages
Proc. SPIE 1991, Diffractometry and Scatterometry, (31 October 1994); doi: 10.1117/12.192012
Show Author Affiliations
Marian A. Herman, Institute of Vacuum Technology and Institute of Physics (Poland)


Published in SPIE Proceedings Vol. 1991:
Diffractometry and Scatterometry
Maksymilian Pluta; Mariusz Szyjer, Editor(s)

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