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Proceedings Paper

Light-scattering method for structural perfection testing of both silicon surface and near-surface layers
Author(s): G. E. Domashev; Yuri M. Shirshov; Valeri A. Sterligov; Yuri V. Subbota; Sergey V. Svechnikov
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Paper Abstract

Studies of both superclean silicon wafer surface and subsurface layer have shown high informative possibilities of the light scattering method. It was found that measurements of light scattering indicatrix vs azimuth make it possible to fix the occurrence of atomic steps on the surface studied. The possibility of detecting stacking faults in silicon single crystals is demonstrated by analyzing the intensity of the scattered light with a 442 nm wavelength during scanning of the sample surface with a focused laser beam.

Paper Details

Date Published: 31 October 1994
PDF: 9 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191991
Show Author Affiliations
G. E. Domashev, Institute of Semiconductor Physics (Ukraine)
Yuri M. Shirshov, Institute of Semiconductor Physics (Ukraine)
Valeri A. Sterligov, Institute of Semiconductor Physics (Ukraine)
Yuri V. Subbota, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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