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Proceedings Paper

Laser-thermal diagnostics of multilayer opto- and microelectronic structures
Author(s): Sergey V. Svechnikov; Leonid L. Fedorenko; E. B. Kaganovich; V. P. Plahkotny; S. V. Baranetz; V. A. Antonov
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Paper Abstract

Magnitude and kinetics of laser induced integral flow of thermal radiation of semiconductors and metal-semiconductor structures are studied. The possibilities of latent defect disclosure in metal-semiconductor structures, near-surface macrodefects in semiconductor wafers, to control surface properties of a semiconductor and metal-semiconductor interface with the help of developing the laser-thermal method of diagnostics have been shown. It is shown also that measurements of integral flow of thermal radiation allow us to draw conclusions about the condition and mechanisms for laser-stimulated diffusion, defects creation, p-n junction, and ohmical contact formation processes in semiconductor structures.

Paper Details

Date Published: 31 October 1994
PDF: 6 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191987
Show Author Affiliations
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Leonid L. Fedorenko, Institute of Semiconductor Physics (Ukraine)
E. B. Kaganovich, Institute of Semiconductor Physics (Ukraine)
V. P. Plahkotny, Institute of Semiconductor Physics (Ukraine)
S. V. Baranetz, Institute of Semiconductor Physics (Ukraine)
V. A. Antonov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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