Share Email Print
cover

Proceedings Paper

Multiple charging of recombination centers as one of the causes of semiconductor scintillators inertiality
Author(s): V. D. Ryzhikov; V. N. Suprunenko; Olegh V. Vakulenko
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The new scintillation x-ray and gamma-ray detectors of `semiconductor scintillator- photodiode' type are preferential as the traditional scintillator-photoelectronic impurity systems. In particular, the ZnSe(Te)-based scintillators, connected to silicone photodiode, have a light yield 1.5 - 2 times larger than the light yield for the CsJ(Te). The shortcoming of ZnSe scintillators is their relatively large inertiality. The x-ray luminescence (XL) signal relaxation is not being described by the simple exponential or hyperbolical law. After the XL extinguishing, one can observe even some XL strengthening, that leads to the significant shining time increase. To reveal the ZnSe scintillators inertiality causes, an investigation of the impurity semiconductor luminescence via computer modeling has been carried out. The kinetics, temperature dependence, and infrared irradiation influence have been investigated. The properties of the system containing the multiple charged recombination centers (MRC), in particular the amphoteric centers (AC), were compared to properties of the system containing the simple recombination centers (SRC) only.

Paper Details

Date Published: 31 October 1994
PDF: 4 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191985
Show Author Affiliations
V. D. Ryzhikov, Kiev Univ. (Ukraine)
V. N. Suprunenko, Kiev Univ. (Ukraine)
Olegh V. Vakulenko, Kiev Univ. (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

© SPIE. Terms of Use
Back to Top