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Proceedings Paper

Stress diagnostics in the plates of semiconductor crystals by means of light polarization modulation
Author(s): Boris K. Serdega; V. G. Zykov
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Paper Abstract

Peculiarities of the birefringence in Si-crystals caused by mechanical stress are investigated, using a method based on polarization modulation by means of a photoelastic modulator. Samples with the external operated stress and conventional Si-plates with the nonregular residual inner stress were tested by employing this method. Registration of the stress with the value more than 10-3 kg/cm2, investigation of the value of the stress spatial distribution and determination of the direction of the strain caused by this stress are available.

Paper Details

Date Published: 31 October 1994
PDF: 4 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191981
Show Author Affiliations
Boris K. Serdega, Institute of Semiconductor Physics (Ukraine)
V. G. Zykov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics

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