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Proceedings Paper

Piezo-optic diagnostic of elastic tension and identification of defect types in CdTe by examination of exciton-defect complexes
Author(s): B. E. Pesetsky; G. A. Shepelskii; M. V. Strikha; N. I. Tarbaev
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Paper Abstract

It has been shown the evidence for the energy location of low-temperature photoluminescence (PL) of bound exciton complexes lines can be used as a technique of internal stress diagnostic in high quality bulk CdTe the substrates material for epitaxial growth photosensitive HgCdTe layers. The obtained deformation dependencies of the energy location and PL lines intensities allow us to estimate the value and sign of elastic stresses as well as defects type.

Paper Details

Date Published: 31 October 1994
PDF: 5 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191980
Show Author Affiliations
B. E. Pesetsky, Institute of Semiconductor Physics (Ukraine)
G. A. Shepelskii, Institute of Semiconductor Physics (Ukraine)
M. V. Strikha, Institute of Semiconductor Physics (Ukraine)
N. I. Tarbaev, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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