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Proceedings Paper

Raman scattering (RS) and photoluminescence (PL) study of AlGaAs films grown from Ga-Bi-Al solution melt by LPE
Author(s): S. A. Vasilkovskii; Yu. Yu Bacherikov; Semen I. Krukovskii
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Paper Abstract

The use of Raman scattering and low temperatures photoluminescence is used to characterize the properties of thin n-AlGaAs films grown from Ga-Bi-Al solution-melt by LPE on SI GaAs substrates. By using these optical methods the Al concentration dependence for AlGaAs films with change of Bi concentration and for two fixed Al concentrations were obtained.

Paper Details

Date Published: 31 October 1994
PDF: 6 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191978
Show Author Affiliations
S. A. Vasilkovskii, Institute of Semiconductor Physics (Ukraine)
Yu. Yu Bacherikov, Institute of Semiconductor Physics (Ukraine)
Semen I. Krukovskii, Institute of Material (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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