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Proceedings Paper

Some aspects of thin-film ellipsometry
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Paper Abstract

Ellipsometry is well known to be a very powerful technique for investigation of films, surfaces, interfaces and so on. Thanks to its principals and high quality of standard polarization prisms, ellipsometry has a sensitivity about one hundred's part of monolayer or some hundred's parts of angstrom if this sensitivity is recalculated for the thickness measurements. This very convenient and sensitive method of investigations also is very simple in realization. Unfortunately, ellipsometry is an indirect method. It may be the best method for investigations of little changes in well defined systems, but obtaining the optical parameters of an investigated system from the measured ellipsometrical angles (psi) and (delta) can be very difficult. Thus all results of ellipsometrical measurements have to be interpreted on the basis of some physical model and obtained optical parameters are only the parameters of the concrete chosen model. Difficulties in investigations of thin films and sub-monolayer coverings are: the nonuniformity of a substrate, the choice of an appropriate model for having the meaningful physical description, and a selection of measurement conditions for obtaining all parameters of this model. This article does not pretend to review all of the problems of the thin films ellipsometry and does not have a somehow full list of references; it is only a short look over some aspects of the ellipsometry of thin films.

Paper Details

Date Published: 31 October 1994
PDF: 5 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191977
Show Author Affiliations
Eugene G. Bortchagovsky, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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