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Proceedings Paper

Luminescence profiling: a diagnostic method for an impurities-defects system in semiconductor materials
Author(s): Vladimir N. Babentsov; Aleksandr I. Vlasenko; N. I. Tarbaev
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Paper Abstract

In this paper a new method of impurities defect interaction monitoring by analyzing the low temperature many-bands photoluminescence spectra (PL) under the nonuniform external perturbation of the defect system is presented. As an example a PL spectra of cadmium telluride monocrystal plates after annealing in evacuated ampoule, cadmium and gallium atmosphere are discussed versus a coordinate of diffusion. The same well known background impurities such as Cu, Li, P and their complexes with native defects were studied under non- uniform deviation from stoichiometric composition of material toward the sample thickness.

Paper Details

Date Published: 31 October 1994
PDF: 7 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191975
Show Author Affiliations
Vladimir N. Babentsov, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Vlasenko, Institute of Semiconductor Physics (Ukraine)
N. I. Tarbaev, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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