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Proceedings Paper

Compound material investigation by spectroscopic ellipsometry
Author(s): Vladimir G. Litovchenko; Sergey I. Frolov; Nickolai I. Klyui
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Paper Abstract

It is shown that spectroellipsometry (SE) as a non-destructive and contactless optical method may be used for characterization of transition layer properties, determination of optical bands positions and free-carrier concentration, evaluation of composition of compound materials and so on. A set of computer programs for the determination of dielectric functions (epsilon) 1 ((omega) ) and (epsilon) 2((omega) ) from ellipsometric angles (psi) and (Delta) was developed for the system with one, two and three interfaces. Computer simulations of electron band structure of monoatomic and compound materials (Si, C, SiC), including microcrystalline ones, were also made. The composition of some compound materials (SiC,HTSC) have been obtained from comparison of spectroellipsometry data with theory predictions.

Paper Details

Date Published: 31 October 1994
PDF: 5 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191969
Show Author Affiliations
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Ukraine)
Sergey I. Frolov, Institute of Semiconductor Physics (Ukraine)
Nickolai I. Klyui, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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