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Photodiffractive and photoabsorptive techniques for nondestructive control of semiconducting wafers and structures
Author(s): Kestutis Jarasiunas; E. Gaubas
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Paper Abstract

Investigation of the interaction of powerful laser radiation with semiconductors allows us to develop a number of novel techniques for active spectroscopy of semiconductors. Different approaches, based on light induced modulation of refractive or absorptive index of the semiconductor via photothermal, photorefractive, resonant exitonic or free carrier based effects has been used to reach the goal. In this paper we review some applications of two nondestructive techniques for characterization of bulk semiconductors and structures: transient free carrier grating technique and combined optical-microwave technique, both based correspondingly on refractive or absorption indices modulation by free carriers. The case of coexisting refractive index modulation mechanisms by free carriers (FC) and by light induced space-charge (SC) electric fields is analyzed concerning the role of defects in photorefractive GaAs crystals. The applications of those techniques given below are mainly based on investigations, performed at the Laboratory of Optical Diagnostics of Semiconductors at Vilnius University or in collaboration with other research institutions.

Paper Details

Date Published: 31 October 1994
PDF: 10 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191966
Show Author Affiliations
Kestutis Jarasiunas, Vilnius Univ. (Lithuania)
E. Gaubas, Vilnius Univ. (Lithuania)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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