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Proceedings Paper

Subresolution artifacts optimized for use with Canon's CQUEST illumination system and their cost-effective realization using the Lepton EBES4 e-beam reticle generator
Author(s): Charles S. Biechler; C. M. Rose; David M. Walker; Akiyoshi Suzuki; Kazuhiro Takahashi
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Paper Abstract

The i-line stepper is the major manufacturing tool for the exposure of critical levels in the 16 Mb DRAM. There is great advantage to extend the resolution of this technology to the 0.35pmregime in order to use it in the manufacture of 64 Mb DRAMs or beyond. The advent of off-axis illumination systems and the use of optical interference patterns on the reticle (either phase shifting or subresolution) have shown great promise in allowing such an extension to practical manufacturing applications. However, the modification of reticles to provide the optical interference can be very costly. Phase shifting levels add complexity to the reticle manufacturing and can introduce defects that are difficult to detect with presently available equipment. While the use of subresolution artifacts alleviate some of these problems, their small size and precise positioning requirements make writing time on presently available reticle generating tools somewhat prohibitive. This paper describes a particular pattern of subresolution artifacts that are effective when used with Canon's CQUEST off-axis illumination system for printing 0.4 pm contact holes and can be efficiently added to reticles using the Lepton EBES4 Reticle Generator.

Paper Details

Date Published: 3 November 1994
PDF: 4 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191957
Show Author Affiliations
Charles S. Biechler, Lepton, Inc. (United States)
C. M. Rose, Lepton, Inc. (United States)
David M. Walker, Lepton, Inc. (United States)
Akiyoshi Suzuki, Canon Inc. (Japan)
Kazuhiro Takahashi, Canon Inc. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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