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Proceedings Paper

New method of critical dimension (CD) control for 64-Mbit-DRAM reticles
Author(s): Masahiro Uraguchi; Hideaki Hasegawa; Yuhichi Yamamoto; Hideyuki Kanemitsu; Eiichi Hoshino; Akira Morishige
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Paper Abstract

Using the chemically amplified negative resist SAL-601TM (Shipley Microelectronics LTD) and iterative dry etching, we improved the CD yield of 64 Mbit-DRAM (0.35 micrometers design rule) reticles. SAL-601 features high contrast and high resolution, and iterative etching is a superior method in a dry etching process. To perform iterative dry etching with SAL-601, we needed a more vertical resist profile to measure a chromium pattern under the resist correctly. We had to also prevent deterioration of the resist sensitivity. This paper describes how these problems were solved.

Paper Details

Date Published: 3 November 1994
PDF: 11 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191946
Show Author Affiliations
Masahiro Uraguchi, Fujitsu Ltd. (Japan)
Hideaki Hasegawa, Fujitsu Ltd. (Japan)
Yuhichi Yamamoto, Fujitsu Ltd. (Japan)
Hideyuki Kanemitsu, Fujitsu Ltd. (Japan)
Eiichi Hoshino, Fujitsu Ltd. (Japan)
Akira Morishige, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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