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Proceedings Paper

X-ray mask distortion induced by final back-etching process
Author(s): Tadashi Matsuo; Nobuhiko Fukuhara; F. Noguchi; S. Tanaka
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Paper Abstract

X-ray mask distortion can be attributed to the absorber stress, and the fabrication process associated with membrane stress and mask structure. Fabrication process induced distortion is greatly influenced by the sequence of each step, that is e-beam writing, bulk-Si etching (back- etching), and frame mounting. On fabricating x-ray mask, final back-etching process (consisting of e-beam writing onto frame mounted blank, succeeding back-etching) is thought to be comparatively practical and feasible. We evaluated x-ray mask distortion caused by final back-etching step for several masks containing structural features. Simulated results on the basis of elastic theory predicted that absorber pattern making after half back-etching or minimizing the area of tensile stressed membrane reduces the in-plane distortion caused by back-etching step. In addition, the experimentally obtained results demonstrated that pattern pitch (2.5 mm) deviation (3 (sigma) ) was suppressed down to 30 nm, which was within the repeatability of measurement system.

Paper Details

Date Published: 3 November 1994
PDF: 9 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191944
Show Author Affiliations
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Nobuhiko Fukuhara, Toppan Printing Co., Ltd. (Japan)
F. Noguchi, Toppan Printing Co., Ltd. (Japan)
S. Tanaka, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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