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Proceedings Paper

Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system
Author(s): Tsuneaki Ohta; R. Kumar; Shuichi Noda; Masanori Kasai; Hiroshi Hoga
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Paper Abstract

The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000 degree(s)C showed the suitable properties for X-ray mask, such as well- controlled tensile stress of 5 X 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000 degree(s)C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000 degree(s)C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

Paper Details

Date Published: 3 November 1994
PDF: 9 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191942
Show Author Affiliations
Tsuneaki Ohta, Oki Electric Industry Co., Ltd. (Japan)
R. Kumar, Oki Electric Industry Co., Ltd. (Japan)
Shuichi Noda, Oki Electric Industry Co., Ltd. (Japan)
Masanori Kasai, Oki Electric Industry Co., Ltd. (Japan)
Hiroshi Hoga, Oki Electric Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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