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Proceedings Paper

New mask optimization methodology using exposure-defocus and mask fabrication latitude
Author(s): Keisuke Tsudaka; Minoru Sugawara; Hiroichi Kawahira; Akihiro Ogura; Satoru Nozawa
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Paper Abstract

EDM (Exposure-Defocus and Mask fabrication latitude) methodology has been established in order to evaluate the practical and reliable process latitudes. A parameter of mask linewidth is newly introduced in the EDM methodology as well as the conventional parameters, exposure dose and defocus, because the mask linewidth fluctuation is an important contributor to the image degradation on wafer especially for the patterns close to the resolution limit, where the wafer linewidth is nonlinear to the mask linewidth. In this paper, the algorithm of this methodology is discussed in detail by a general formula, and its feasibility is then verified by simulating 0.4 micrometers isolated contact hole imaging in the cases of binary mask with i-line, i- line/FLEX method or KrF exposure, and attenuated phase shifting mask with i-line exposure. For each application, the practical process latitude can be precisely defined in the 3D space of the exposure dose, defocus and mask linewidth latitude.

Paper Details

Date Published: 3 November 1994
PDF: 12 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191933
Show Author Affiliations
Keisuke Tsudaka, Sony Corp. (Japan)
Minoru Sugawara, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)
Akihiro Ogura, Sony Corp. (Japan)
Satoru Nozawa, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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