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Proceedings Paper

Development of 0.35-um generation reticles using advanced mask blanks
Author(s): Yoshiyuki Tanaka; M. Matsuda; Tsuyoshi Tanaka; Ryoichi Kobayashi
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Paper Abstract

The 0.35 micrometers generation of semiconductor technology requires reticles which have CD uniformity of 0.03 micrometers (3 (sigma) ), registration accuracy of 0.05 micrometers (3 (sigma) ) and which are free from defects 0.3 micrometers or smaller in size. The CD and registration targets have been achieved through enhancement of exposure systems and optimization of processes. However, it is essential to improve materials to meet the reduced-defect requirement. In this work the development of advanced mask blanks has contributed to realizing reticles of improved quality. Of particular significance was the reduction in pinhole density 0.5 micrometers or greater in size in mask blanks, by holding dust flying up to the minimum through the use of controlling the ventilation and vent speed of vacuum systems, etc. Formation of contact holes on mask blanks was made easier by improving the surface condition of the chrome oxide layer for making 1.75 micrometers contact holes for the 0.35 micrometers generation. Patterns were formed with reduced edge roughness and vertical walls to improve reticle quality. The advanced mask blanks have made it possible to increase yields and improve quality of 0.35 micrometers generation reticles.

Paper Details

Date Published: 3 November 1994
PDF: 5 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191928
Show Author Affiliations
Yoshiyuki Tanaka, NEC Corp. (Japan)
M. Matsuda, NEC Corp. (Japan)
Tsuyoshi Tanaka, NEC Corp. (Japan)
Ryoichi Kobayashi, ULVAC Coating Corp. (Japan)

Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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