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Proceedings Paper

Printability of organic defects on an x-ray mask
Author(s): Yasunao Saitoh; Ikuo Okada; Misao Sekimoto; Takashi Ohkubo; Tadahito Matsuda
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Paper Abstract

Programmed organic defects are formed on an x-ray mask, and are printed onto the resist using the synchrotron radiation exposure system. The printed resist image of the mask defects depends on the exposure dose and on the defect's position within the pattern. An isolated defect outside the mask patterns is easily transferred to the resist image by the optimum dose for printing fine patterns. Otherwise, within high density patterns (such as line and space pattern), defects are not transferred to the resist image by the optimum dose, due to the increase in exposure intensity caused by x-ray diffraction from pattern edges. Furthermore, with a 10% over-dose, almost 1-micrometers -thick organic defects did not transfer as defects to the resist image. For 2-micrometers -thick defects, the printability depends mainly on the shape of defect edge: sharp-edged defects on the x-ray mask are easily printed even when using an exposure dose 30% over greater than the optimum dose.

Paper Details

Date Published: 3 November 1994
PDF: 8 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191921
Show Author Affiliations
Yasunao Saitoh, NTT LSI Labs. (Japan)
Ikuo Okada, NTT LSI Labs. (Japan)
Misao Sekimoto, NTT LSI Labs. (Japan)
Takashi Ohkubo, NTT Advanced Technology Corp. (Japan)
Tadahito Matsuda, NTT LSI Labs. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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